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Semiconductor Simulation Convergance issue
Posted Apr 20, 2018, 4:27 p.m. EDT Charged Particle Tracing, Semiconductor Devices Version 5.3 0 Replies
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Hello,
I am currently trying to simulate a particle sensor chip that uses a high N and P doping concentrations in a non symmetric confiugration within the silicon. Also, I am reverse biasing the voltage appled to the N and P regions with a Auxilitary sweep function that comsol uses to reach -800V.
The simulation converges to -800V when I only have 1 rectangle (which is the sensor). But as soon as I create add another small rectangle (glass; also adding this domain to the charge conservation tab in the semiconductor module), to determine the electric field outside the silicon the solution no longer converges.
Could someone please help me with this? Thank you!
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Hello Omeed
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