The Application Gallery features COMSOL Multiphysics® tutorial and demo app files pertinent to the electrical, structural, acoustics, fluid, heat, and chemical disciplines. You can use these examples as a starting point for your own simulation work by downloading the tutorial model or demo app file and its accompanying instructions.
Search for tutorials and apps relevant to your area of expertise via the Quick Search feature. Note that many of the examples featured here can also be accessed via the Application Libraries that are built into the COMSOL Multiphysics® software and available from the File menu.
This tutorial analyzes the DC characteristics of an InSb p-Channel FET, using the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without a large increase of computational resources. The confinement effect is applied both ... Read More
This model shows how to add several linked mobility models to the simple MOSFET example. Read More
This benchmark model computes the valence band structure of an unstrained and a strained bulk GaN wurtzite crystal, as a tutorial for users who wish to set up multiple wave function components with the Schrödinger Equation interface. The model follows the formulation given in the ... Read More
This model calculates the current and charge characteristics of a floating gate Electrically Erasable Programmable Read-Only Memory (EEPROM) device. A stationary study demonstrates the effects of varying the charge stored on the floating gate by computing Current-Voltage curves as a ... Read More
This model shows how to compute the AC characteristics of a MOSFET. Both the output conductance and the transconductance are computed as a function of the drain current. Read More
The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both ... Read More
This tutorial model solves a two-component Schrödinger equation for the eigenstates of a simple silicon quantum dot in a uniform magnetic field, based on the paper by Jock et al. on the topic of spin-orbit qubits. The built-in domain condition Lorentz Force for the Schrödinger Equation ... Read More
This tutorial compares experimental data from the literature with a COMSOL model of a MOSCAP with interface traps (surface states). The Trap-Assisted Surface Recombination feature is used to simulate the effects of the trap charges and the processes of carrier capturing and emitting by ... Read More
This 3D model of a nanowire MOSFET employs the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without requiring excessively high computational costs. The oxide layer is simulated explicitly with geometric domains, and ... Read More
The Superlattice Band Gap Tool model helps the design of periodic structures made of two alternating semiconductor materials (superlattices). The model uses the effective mass Schrödinger equation to estimate the electron and hole ground state energy levels in a given superlattice ... Read More