Discussion Closed This discussion was created more than 6 months ago and has been closed. To start a new discussion with a link back to this one, click here.
diode model in semiconductor model library
Posted Sep 27, 2011, 10:06 a.m. EDT Modeling Tools & Definitions, Parameters, Variables, & Functions 2 Replies
Please login with a confirmed email address before reporting spam
Hello
I have an important Question about one part of
Comsol model for diode and semiconductor part at drift diffusion
model; my Question is that in the one dimensional model for diode in
comsol the expresion for diode in the boundary
integration variables in 2D model in Comsol we write : IC="q*(lm2-lm3)" why we define
current in this form, that we define the lm2 or lm3 in the boundary
condition in the weak form of boundary condition!!
thanks in advance
I have an important Question about one part of
Comsol model for diode and semiconductor part at drift diffusion
model; my Question is that in the one dimensional model for diode in
comsol the expresion for diode in the boundary
integration variables in 2D model in Comsol we write : IC="q*(lm2-lm3)" why we define
current in this form, that we define the lm2 or lm3 in the boundary
condition in the weak form of boundary condition!!
thanks in advance
2 Replies Last Post Sep 27, 2013, 1:54 a.m. EDT