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Extended Gate FET Modeling woes
Posted Aug 10, 2021, 11:56 p.m. EDT Electromagnetics, Semiconductor Devices, Electrochemistry Version 5.6 0 Replies
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Why is comsol so difficult? I'm new to comsol, and I've spent months failing at making this model. I'm quite frustrated, I hope someone can atleast point me in the right direction. I want to 2-D model an Extended Gate FET (kinda like this as a pH sensor. and I've been using Comsol ISFET for assistance with the documentation and with a starting point. I keep getting hit with numerous errors, and I felt like maybe if I got a fresh perspective on how to approach this, it could help. I am terrible at the concept of meshing, I don't quite understand.
Reference electrode is implied (as per ISFET documentation) How can I model a sensing electrode emersed in an electrolyte and attached by a connector to the gate of a FET?
Edit current error when I try a semiconductor study reads: - Feature: Stationary Solver 1 (sol3/s1) Failed to find a solution for the initial parameter. Maximum number of Newton iterations reached. Returned solution is not converged. Not all parameter steps returned.
Hello Freya Lee
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