Discussion Forum

Dear all,

I would like to run a simulation for Si nanowires illuminated by an IR beam to see steady state responses of electrons and holes such as distributions, currents and so on.
I know how to use RF module to run a simulation.
But I am not so much familiar with semiconductor module.
I tried to use two physics including RF and semiconductor with two step study (first RF and then semiconductor), but I could not run a successful simulation. The E field of the RF study is supposed be used as the EM source (IR beam) for the semiconductor study. The RF study is frequency domain, but it looks like frequency domain study can not be used in semiconductor module, so I defined frequency-domain, perturbation for semiconductor study.
RF simulation works well, but semiconductor does not.
The major problem is this:
I can not apply resultant E fields of RF study (emw.Ex,emw.Ey,emw.Ez) to semiconductor study as the source.
It looks like that sources in semiconductor module are defined by using metal contacts, and I could not find EM sources to apply in semiconductor module itself.
So there are a few questions:
1- Is it possible to apply EM source in free space propagating toward nanowires in semiconductor module itself?
2- If not, is possible to use RF and semiconductor physics together as already explained to solve this problem?
3- If yes, how can I apply the E field resultant from RF study to semiconductor study?
4- If not, I would like to know if it is generally possible to do this kind of simulation in Comsol?
5- If yes, how can I do it please?
By the way I am using Comsol 4.4.
I appreciate if you give me some advice how to run this kind of simulation.

Thanks,
Mohammad Parvinnezhad Hokmabadi,