Deposition of Al2O3 on the surface of a U-shaped structure using ALD method
Application ID: 139921
This model analyzed the ALD deposition process of alumina film on the surface of a U-shaped structure. In this process, gaseous precursors are sequentially introduced to the reaction chamber and sequentially undergo a series of adsorption and chemical reactions on the surface. The adsorption process is self-limiting by the active sites. In this model, the selected gaseous precursors are trimethylaluminum (TMA) and H2O, while the purge gas is nitrogen.
The fluid flow, mass transfer inside the ALD chamber as well as the chemical reactions on the U-shaped structure are considered in the model. Simulation results can be used to better understand the ALD deposition process and optimize the process parameters.
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