R0 4[in] Chamber radius
L0 30[in] Chamber length
Dw 6[in] Wafer diameter
Lw 6[in] Length of wafer cassette
Dp 6[in] Pump diameter
Rin 1[cm] Gas line inlet radius
Tf 600[degC] Furnace temperature
sccm 1 Total mass flow rate
sccmH2 0.8*sccm H2 mass flow rate (sccms)
sccmSiH4 0.2*sccm SiH4 mass flow rate (sccms)
SH2 lsH2*1[l/s] Pump speed H2
SSiH4 lsSiH4*1[l/s] Pump speed SiH4
lsH2 350 l/s of H2
lsSiH4 450 l/s of SiH4
sp 1 Sweep parameter