Thermal Analysis of a Czochralski Crystal Growth Furnace
Application ID: 124201
The Czochralski (CZ) method is one of the most important methods for the preparation of monocrystalline silicon. The shape of the crystal, especially the diameter, is controlled by carefully adjusting the heating power, the pulling rate, and the rotation rate of the crystal.
This model demonstrates the thermal analysis of such a crystal growth furnace. The system is heated using an electric heater and the surface-to-surface radiation is considered. The crucible and crystal rods are rotating in the opposite directions. The flow in the melt is neglected in the current model. The protective gas flow and the convective heat transfer is investigated to find out the right parameters to maintain the required temperature gradient at the crystal growth interface.
This application example illustrates applications of this type that would nominally be built using the following products:
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Specification Chart and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.