Technical Papers and Presentations

This paper showed that: * SAG-MOCVD is a powerful tool to fabricate OEICs and is also effective to extract true surface kinetics during MOCVD. * GaAs-MOCVD process was examined by SAG analysis where it was seen that below 600ºC, surface kinetics shows non-linear behavior. * Surface reaction rate constant of adsorbed species was constant against offset angle, while adsorption equilibrium constant has a offset angle dependency. * S/Zn doping shows little or no effect on surface kinetics. * InGaAsP PL wavelength was well predicted by SAG simulation based on the obtained kinetics. * Mask design for OEICs is possible based on kinetic data base and kinetic simulation.

This paper is in Japanese.