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Drift-Diffusion and Ballistic Transport Modeling in III-Nitride Multiple-QW Light Emitting Structures
Published in 2010
COMSOL-based modeling software developed at Ostendo Technologies allows detailed simulation of semiconductor lasers and light-emitting diodes. In this work, we study the inhomogeneity of the carrier injection into optically active quantum wells of polar and nonpolar III-nitride light emitters. Despite the absence of polarization-induced potential barriers, the nonpolar multiple-quantum well structures are shown to suffer from strongly inhomogeneous injection which becomes stronger in longer-wavelength green light emitters with deeper quantum wells. We show that indium incorporation into waveguide layers noticeably improves the injection uniformity.
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